IAUCN04S7N056DATMA1 vs IAUCN04S7L050HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N056DATMA1 by Infineon and IAUCN04S7L050HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N056DATMA1
IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
IAUCN04S7N056DATMA1 ✓ ActiveInfineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN04S7N056DATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | OptiMOS™ 7 |
| Transistor Type | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | — |
| Operating Temperature Range | -55°C to +175°C | — |
| Package | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| RoHS Status | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| MSL Level | — | 1 (per JEDEC J-STD-020) |