IAUCN04S7N056DATMA1 vs IAUCN04S7L050HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N056DATMA1 disebabkan oleh Infineon dan IAUCN04S7L050HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7N056DATMA1 IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7N056DATMA1 IAUCN04S7L050HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 —
Series OptiMOS 5 40V OptiMOS™ 7
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 60 A (Tj) —
RDS(on) (typ) 5.59 mΩ —
Power Dissipation (Pd) 41 W (Tc) —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-61 (TDSON EP, 5x6 mm) PG-TDSON-8-57 (SuperSO8 half-bridge)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 (family-level, automotive grade)
Technology OptiMOS 5 trench MOSFET Trench MOSFET, OptiMOS™ 7 40V
Status RoHS Compliant Compliant
Packaging Type Tape & Reel —
Configuration — Dual N-Channel (Dual Drain, Half-Bridge)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) @ Tc=25°C — 40 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Aras MSL — 1 (per JEDEC J-STD-020)

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