IAUCN08S7L018ATMA1 vs IAUCN08S7L033ATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L018ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L018ATMA1

IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 ✓ Active
Infineon
IAUCN08S7L033ATMA1

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN08S7L018ATMA1 IAUCN08S7L033ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7
Technology N-Channel Trench MOSFET OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at Tj 210 A 130 A
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc]
Maximum RDS(on) at VGS=10 V 1.8 mΩ
Power Dissipation (PD) at Tc=25 °C 169 W
Operating Temperature Range -55 °C to +175 °C -55°C to +175°C (TJ)
Package PG-TDSON-8-43 (5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Qualification Automotive (per Infineon part description) Automotive Grade (per Infineon datasheet header)
Gate Drive Voltage (typical) 10 V
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, typical for this package)
RoHS Status Compliant Compliant
Series Automotive OptiMOS 7
Transistor Type N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C 118 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit)

Datasheets & Resources

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