IAUCN08S7L018ATMA1 vs IAUCN08S7L033ATMA1 比較
詳細並排比較 IAUCN08S7L018ATMA1 由 Infineon 與 IAUCN08S7L033ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN08S7L018ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Tj | 210 A | 130 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55°C to +175°C (TJ) |
| 封裝 | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | Automotive Grade (per Infineon datasheet header) |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | Automotive OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |