IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN08S7L024ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.21 | $221.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
IAUCN08S7L024ATMA1 Overview
A power MOSFET is a voltage-controlled majority-carrier switch that uses an isolated gate to modulate conduction between source and drain terminals. Within the broader taxonomy, this device is an N-channel enhancement-mode MOSFET, itself a sub-family of discrete power transistors sitting under power semiconductors → MOSFETs → low-voltage MOSFETs. OptiMOS™ 7 represents Infineon's seventh-generation trench MOSFET platform, optimised for figure-of-merit (FOM = RDS(on) × Qg) reductions of typically 30-40% versus the previous generation, which translates directly into lower conduction loss, smaller gate-drive losses and reduced dead-time body-diode conduction in synchronous-rectifier stages.
Key differentiating specifications include a maximum RDS(on) of 2.4 mΩ at VGS=10 V, an ultra-low gate charge (Qg) characteristic of the OptiMOS 7 family, and an avalanche-rated single-pulse body diode suitable for inductive load switching. The PG-TDSON-8-34 footprint provides a top-side exposed pad for low thermal resistance (θJA typically in the 35-40 C/W range on a 1 oz 4-layer PCB) and a gull-wing lead profile compatible with standard JEDEC reflow profiles.
Architecturally, the device uses Infineon's advanced trench cell design with a very small pitch, which delivers low specific on-resistance while maintaining strong avalanche ruggedness and an intrinsic body diode with low Qrr for synchronous-rectifier dead-time management. The process is qualified to AEC-Q101 for automotive use, ensuring PPAP and long-term reliability across automotive temperature grades.
Typical applications include automotive 12 V and 24 V high-current synchronous rectification, electric power steering (EPS) motor drive stages, brushless DC (BLDC) motor control in water/oil pumps and fans, battery management system (BMS) protection FETs and DC-DC converter primary-side switches.
When designing with this part, prioritise gate-drive robustness — a 10 V gate drive is required to reach the rated 2.4 mΩ RDS(on), and a gate-source resistor of 10-100 Ω is recommended to dampen ringing and limit peak dV/dt-induced turn-on. Ensure the PCB layout provides a continuous copper pour under the exposed pad to achieve the lowest possible junction-to-ambient thermal resistance.
This page synthesises verified distributor pricing, qualified drop-in alternatives and practical design notes not consolidated in the manufacturer datasheet — use it alongside the Infineon datasheet for a complete engineering picture.
Drop-in alternatives for IAUCN08S7L024ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN08S7L024ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, MSL Level, Automotive Qualification.
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View Datasheet →IAUCN08S7L024ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS™ 7 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | 150 A |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | 148 W (Tc) |
| Package | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) |
IAUCN08S7L024ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; 10V typical, ±20V VGS max |
| Pin 2 | Source — Source (Kelvin connection for clean gate drive) |
| Pin 3 | Source — Source / power return |
| Pin 4 | Drain — Drain (also bonded to exposed pad) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | Source — Source / power return |
| Pin 8 | Source — Source / power return |
Safe Operating Area (estimated from datasheet SOA boundary)
Typical Applications
IAUCN08S7L024ATMA1 is suitable for 6 applications: Automotive 12V / 24V Synchronous Rectification, Electric Power Steering (EPS) Motor Drive, BLDC Motor Control in Water/Oil Pumps and Fans, Battery Management System (BMS) Protection FET, High-Current DC-DC Converter Primary Switch, Industrial 24V / 48V Hot-Swap and ORing FET.
Automotive 12V / 24V Synchronous Rectification
The IAUCN08S7L024ATMA1 is purpose-built for the low-side and high-side synchronous-rectifier positions in automotive 12 V and 24 V buck and buck-boost converters. Its 2.4 mΩ max RDS(on) at VGS=10 V minimises I²R conduction loss — at 60 A load this corresponds to roughly 8.6 W per FET versus 11.8 W for a 3.3 mΩ part. The 80 V VDS rating provides ample headroom above the 24 V bus load-dump transient envelope (per ISO 7637-2). The PG-TDSON-8-34 footprint fits the standard automotive 5x6 mm power-PCB land pattern, enabling direct drop-in to existing designs. Use a UCC27211 or 1ED3142 gate driver with 10-100 Ω gate-source damping; below 50 kHz switching the loss is overwhelmingly conduction-dominated and the 2.4 mΩ advantage pays back directly.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7L024ATMA1 suits the three-phase inverter stage of column-assist and rack-assist electric power steering, where the 80 V VDS comfortably handles a 12 V bus with margin for inductive kick from the BLDC windings. The 177 A continuous drain current rating gives 3-5x headroom over a typical 40 A peak EPS phase current, lowering Tj rise and extending thermal life. AEC-Q101 qualification is mandatory for EPS modules per automotive OEM PPAP requirements. The 148 W Tc-rated dissipation with a 4-layer 1 oz PCB copper pour keeps Tj below 150C even under continuous 30 A phase operation. Place the FET within 15 mm of the gate driver to minimise gate-loop inductance and avoid spurious turn-on.
Recommended
BLDC Motor Control in Water/Oil Pumps and Fans
In brushless-DC water pumps, oil pumps and cooling fans the IAUCN08S7L024ATMA1 operates as the low-side FET of a three-phase inverter. The OptiMOS 7 generation's low Qrr intrinsic body diode reduces dead-time body-diode conduction loss by typically 30-50% versus OptiMOS 5, which is material at 20 kHz PWM. The 2.4 mΩ RDS(on) keeps the steady-state I²R loss below 5 W per FET at a typical 45 A phase RMS. The PG-TDSON-8-34 (5x6 mm) footprint allows three FETs to fit on a compact inverter PCB section under 30 mm². AEC-Q101 plus 175C Tj rating make it suitable for under-hood ambient temperatures up to +125C.
Recommended
Battery Management System (BMS) Protection FET
The IAUCN08S7L024ATMA1 functions as the high-side or low-side battery protection FET in 12 V/24 V automotive BMS modules, where its 2.4 mΩ RDS(on) translates to less than 50 mV drop at the rated 100 A continuous battery current — critical for cold-crank assist. The 80 V VDS rating exceeds the 24 V system load-dump envelope with margin, and the avalanche-rated single-pulse body diode handles the inductive kick from the battery cabling inductance. The compact PG-TDSON-8-34 footprint allows the protection FET to fit inside the battery disconnect unit housing. Use a dedicated gate driver with over-current comparator (e.g., a 1ED44175N01B) to coordinate fault response.
Recommended
High-Current DC-DC Converter Primary Switch
In isolated and non-isolated 48 V-to-12 V or 24 V-to-12 V DC-DC converters the IAUCN08S7L024ATMA1 operates as the primary-side switch where the 80 V VDS comfortably covers the 48 V bus with transients. The 2.4 mΩ RDS(on) and low Qg keep the total switching+conduction loss under 4 W per FET at 30 A load, enabling 200 W designs on a 25x25 mm PCB without forced air cooling. The 175C Tj rating supports the high-ambient under-hood or rear-axle mounting typical of mild-hybrid converters. AEC-Q101 is required by most automotive OEM power-converter specifications. Use a 1ED3124 isolated gate driver and a small R-C snubber across the drain-source to limit peak ringing.
Recommended
Industrial 24V / 48V Hot-Swap and ORing FET
Outside automotive, the IAUCN08S7L024ATMA1 works in industrial 24 V and 48 V hot-swap and ORing applications where its 80 V VDS, 2.4 mΩ RDS(on) and 177 A continuous current rating combine to deliver ultra-low voltage drop on the power path. In ORing configurations the low RDS(on) reduces steady-state loss by tens of watts versus typical 10-30 mΩ ORing MOSFETs. The PG-TDSON-8-34 surface-mount footprint simplifies PCB assembly on standard SMT lines. For non-automotive applications the OptiMOS 7 platform's avalanche ruggedness provides protection during hot-plug transients. Use a dedicated hot-swap controller (e.g., LTC4282-class part) to manage inrush and fault response.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN08S7L024ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7L033ATMA1 | IAUCN04S7L042HATMA1 | IAUCN04S7L050HATMA1 | ISC011N04NM7VATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) | PG-TDSON-8-34 (SSO8 5x6) |
| VDS max | 80 V | 80 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 2.4 mΩ | 3.3 mΩ | 0.42 mΩ | 0.50 mΩ | 1.1 mΩ | 5.5 mΩ |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 80V OptiMOS 7 SSO8 family (vs IAUCN08S7L033ATMA1)
- Higher VDS rating versus 40V-class drop-ins (vs IAUCN04S7L042HATMA1 (40 V))
- Latest OptiMOS 7 generation FOM (vs IPC50N04S5L5R5ATMA1 (OptiMOS 5))
Design Notes
Estimated: at continuous 60 A drain current with RDS(on)=2.4 mΩ, the conduction loss is I²×R = 60² × 0.0024 = 8.6 W per FET. With a PG-TDSON-8-34 thermal resistance of roughly 35 C/W on a 1 oz 4-layer PCB copper pour of 1 square inch, the junction temperature rise is approximately 8.6 × 35 = 300C — so for steady-state 60 A the PCB copper area must be increased to 2-3 square inches to keep Tj rise under 50C above ambient. Use the datasheet thermal model for the exact layout geometry; the above is a first-pass estimate.
Gate-loop inductance must be minimised to prevent spurious turn-on from dV/dt coupling. Place the gate driver within 10-15 mm of the gate pin, use a 10 Ω gate resistor in series and a 10 kΩ gate-source pull-down to hold the FET off during controller power-up. The drain-source loop area should be kept under 50 mm² to limit ringing — use a 0.1-1 µF snubber capacitor across drain-source if ringing exceeds 30% of VDS.
Do not operate above VGS=±20 V absolute maximum — 12 V gate drives are well within rating but any gate-drive overshoot from layout inductance can puncture the gate oxide. Avoid using the FET below its VGS(th) of typically 2-3 V where RDS(on) rises non-linearly. For paralleled operation, use separate gate resistors per device and ensure matched Tj at turn-on to prevent current hogging.
Compliance Information
AEC-Q101 automotive-qualified per Infineon OptiMOS 7 automotive portfolio. RoHS and REACH compliant per manufacturer datasheet. MSL1 per JEDEC J-STD-020. Lead-free (Pb-free) reflow-compatible.
