IAUCN08S7L110ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon
IAUCN08S7L110ATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L110ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.86 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | β |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | β |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΞ© | β |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOSβ’ (Trench) | OptiMOS 7 trench MOSFET |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | β |
| Polarity | Single N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | Automotive OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |