IAUCN08S7L110ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L110ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN08S7L110ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | — |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS™ (Trench) | OptiMOS 7 trench MOSFET |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, typical for this package) |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | — |
| Polarity | Single N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gambaran Suhu Operasi | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |