IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
MPN: IAUCN08S7N036TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.68 | $1,340.00 |
| 1,000 | $2.35 | $2,350.00 |
| 5,000 | $2.05 | $10,250.00 |
IAUCN08S7N036TATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a positive gate-source voltage is applied. The OptiMOS 7 family represents Infineon's latest-generation automotive power MOSFET platform, optimized for switching power conversion, motor drive, and battery management in 48 V and 12 V vehicle electrical systems. As a member of the discrete semiconductor hierarchy, this MOSFET fits within the broader category of power transistors used in automotive electronic control units.
Key specifications include 80 V drain-source breakdown voltage, 3.60 mΩ maximum R_DS(on) at V_GS = 10 V, 129 A continuous drain current, and 118 W power dissipation at T_C = 25 °C. The OptiMOS 7 technology reduces gate charge and output capacitance versus prior generations, lowering switching losses and enabling higher-frequency operation. The top-side cooled SSO10T package provides an exposed die top surface for direct attachment to a heatsink or cold plate, dramatically reducing thermal resistance compared to bottom-cooled packages.
Typical applications include 48 V mild-hybrid electric vehicle (MHEV) systems, electric power steering (EPS), brake-by-wire actuators, DC-DC converters, and battery management systems (BMS). The automotive-grade qualification (AEC-Q101) makes it suitable for under-hood environments where temperature, vibration, and humidity stress exceed commercial-grade requirements.
When designing with this MOSFET, ensure the gate driver can supply sufficient peak current (typically >1 A) to charge the input capacitance quickly, and select a gate resistor to balance switching speed and ringing. The top-side cooling surface should be thermally bonded to the heatsink with thermal interface material (TIM) to achieve the rated thermal performance.
Drop-in alternatives for IAUCN08S7N036TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN08S7N036TATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN08S7N036T
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN04S7N037GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.89 / Unit
View Datasheet →IAUC120N04S6N010ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.68 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →IAUCN08S7N036TATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Polarity | N-Channel |
| Drain-Source Voltage (V_DS) | 80 V |
| Gate-Source Voltage (V_GS) | ±20 V |
| Continuous Drain Current (I_D) | 129 A |
| R_DS(on) max @ V_GS=10V | 3.60 mΩ |
| Power Dissipation (P_D) | 118 W (T_C = 25 °C) |
| Input Capacitance (C_iss) | 3120 pF (typ) |
| Output Capacitance (C_oss) | 1280 pF (typ) |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) |
| Rise Time (t_r) | 8 ns (typ) |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) |
| Fall Time (t_f) | 8 ns (typ) |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) |
| Cooling | Top-side cooled |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
IAUCN08S7N036TATMA1 Pin Configuration
| Pin 1 | Source — Source terminal |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin 9 | Drain — Drain terminal (also top-side thermal pad) |
| Pin 10 | Drain — Drain terminal |
Safe Operating Area (IAUCN08S7N036T)
Typical Applications
IAUCN08S7N036TATMA1 is suitable for 6 applications: 48 V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Drive, Battery Management System (BMS) Disconnect Switch, Brake-by-Wire Actuator Drive, Industrial 48 V Brushless DC Motor Drive, Telecom / Server 48 V Point-of-Load.
48 V Mild-Hybrid DC-DC Converter
The IAUCN08S7N036TATMA1 is a primary switch candidate for 48 V MHEV buck/boost DC-DC converters that step between 48 V and 12 V vehicle rails. Its 80 V V_DS rating provides sufficient margin above the 48 V nominal bus including inductive transients, while the 3.60 mΩ R_DS(on) and 129 A continuous current keep conduction losses manageable at full load. The top-side cooled SSO10T package bonds directly to the chassis or cold plate, sustaining high power dissipation in the confined under-hood environment without bulk heatsinks.
Recommended
Electric Power Steering (EPS) Drive
EPS systems require rugged MOSFETs capable of switching tens of amps into motor windings at high PWM frequency. The IAUCN08S7N036TATMA1's 129 A continuous current rating handles peak steering assist loads, and the 80 V breakdown withstands the back-EMF generated when the motor is commutated aggressively. The AEC-Q101 qualification confirms reliability under hood temperature swings, and the 8 ns typical rise/fall time keeps switching losses modest at 20-50 kHz PWM frequencies typical of EPS inverter stages.
Recommended
Battery Management System (BMS) Disconnect Switch
In BMS active-balancing or pack-disconnect circuits the IAUCN08S7N036TATMA1 provides a low-loss high-current switching element between cells or between pack and load. The 3.60 mΩ R_DS(on) means only ~3.6 W dissipation at 100 A continuous balancing current, and the 80 V rating covers 12 V and 48 V packs with strong transient headroom. Top-side cooling enables the part to sit directly against the pack chassis for sustained operation without PCB copper area becoming the limiting heat-spreading element.
Recommended
Brake-by-Wire Actuator Drive
Brake-by-wire electromechanical actuators demand fail-safe switching with predictable thermal behavior. The IAUCN08S7N036TATMA1's AEC-Q101 qualification and 118 W power dissipation rating make it a strong fit for the half-bridge stages driving each actuator motor. The SSO10T package's top-side cooling is critical here because actuators are space-constrained and need direct chassis bond for thermal relief during regenerative-braking bursts.
Recommended
Industrial 48 V Brushless DC Motor Drive
Outside automotive, 48 V industrial robotics and AGV (automated guided vehicle) drives share the same power-electronics topology. The IAUCN08S7N036TATMA1's 80 V rating and 129 A current serve three-phase inverter stages of 1-2 kW BLDC motors. The OptiMOS 7 generation's low Q_g (implied by the 14 ns turn-on delay) reduces driver-stage loss, and the top-side cooled package simplifies mechanical integration into aluminum-housed motor controllers.
Recommended
Telecom / Server 48 V Point-of-Load
Modern hyperscale data centers distribute 48 V at the rack level and step down to point-of-load voltages at each processor or ASIC. The IAUCN08S7N036TATMA1's 80 V rating and 3.60 mΩ R_DS(on) suit the high-current primary-side switch of such isolated or non-isolated buck converters. The top-side cooled package supports dense SMR (switched-mode rectifier) layouts where board-side cooling cannot shed enough power.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN08S7N036TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7N036T | IAUCN08S7L033ATMA1 | IAUCN04S7N037GATMA1 | IAUC120N04S6N010ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-LHDSO-10-1 (SSO10T) - same | PG-LHDSO-10-1 (SSO10T) - same | PG-LHDSO-10-1 (SSO10T) - same | PG-LHDSO-10-1 (SSO10T) - same | PG-LHDSO-10-1 (SSO10T) - same |
| V_DS (V) | 80 V | 80 V | 80 V | 40 V | 40 V | 80 V |
| R_DS(on) max (mΩ) @ V_GS=10V | 3.60 mΩ | 3.60 mΩ | 3.30 mΩ (-8%) | 3.70 mΩ (+3%) | 1.00 mΩ (-72%) | 3.60 mΩ |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 |
| Cooling Method | Top-side | Top-side | Top-side | Top-side | Top-side | Top-side |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Key Differentiators
- Lowest R_DS(on) in OptiMOS 7 family at 80 V (vs IAUCN08S7L033ATMA1)
- Top-side cooling reduces system thermal resistance (vs IAUC120N04S6N010ATMA1)
- 80 V rating covers 48 V systems with strong transient margin (vs IAUCN04S7N037GATMA1)
Design Notes
Estimated at I_D = 100 A, R_DS(on) = 3.60 mΩ: conduction loss is approximately P = I^2 × R = 100^2 × 0.0036 = 36 W. The PG-LHDSO-10-1 top-side cooled package must be thermally bonded to a heatsink or cold plate with thermal interface material to maintain junction temperature below 175 °C. Without top-side cooling, the SSO10T package cannot sustain this dissipation level.
The SSO10T package has an exposed drain pad on the top side. Use a thermal interface material (TIM) such as Bergquist Hi-Flow or Laird Tflex to bond the top pad to the heatsink or cold plate. The bottom of the package is source-connected; route the high-current source return path with multiple vias and wide copper pours to minimize parasitic inductance that can cause voltage ringing during switching.
Do not exceed V_GS = ±20 V or the gate oxide will be damaged. Use a gate-source Zener clamp (typically 16 V) and a gate resistor in the 4.7-10 Ω range to suppress ringing. Source inductance between the package source pins and the gate driver's ground reference must be minimized; place the gate driver as close as possible to the gate pin and use a Kelvin-source connection if available.
Compliance Information
AEC-Q101 automotive qualified (Note: MOSFETs are typically qualified to AEC-Q101, not AEC-Q100; the latter applies to ICs. Listed here as qualified for automotive.)
