IAUCN10S5L280DATMA1 vs IAUZ18N10S5L420ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUZ18N10S5L420ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUZ18N10S5L420ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Configuration Dual N-Channel MOSFET Array Single with built-in diode
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) β€”
Technology OptiMOS 5 Trench MOSFET OptiMOS 5 trench
Operating Temperature Range -55C to +175C (junction) β€”
Pin Count 8 β€”
MSL Level 1 1
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
Series β€” OptiMOS 5 100V
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25Β°C β€” 18 A
On-Resistance RDS(on) max at VGS=10V β€” 42 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 1.7 V to 2.7 V
Total Gate Charge (Qg) typ. β€” 8.5 nC
Power Dissipation (PD) at TC=25Β°C β€” 30 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Automotive Qualification β€” AEC-Q101 qualified

Datasheets & Resources

Browse All Products Create BOM Request Quote