IAUCN10S7N021ATMA1 vs IAUC28N08S5L230ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN10S7N021ATMA1 IAUC28N08S5L230ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS-5 Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Operating Junction Temperature -55 °C to +175 °C -55 °C to +175 °C
Package PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-33 (5x6 mm SSO8)
Mounting Type Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS-5
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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