IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
MPN: IAUCN10S7N021ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.47 | $34.70 |
| 100 | $3.05 | $305.00 |
| 500 | $2.68 | $1,340.00 |
| 1,000 | $2.34 | $2,340.00 |
| 5,000 | $2.05 | $10,250.00 |
Drop-in alternatives for IAUCN10S7N021ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IAUCN10S7N021ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 175 A |
| RDS(on) max @ VGS=10 V | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC |
| Input Capacitance (Ciss) | 2.98 nF |
| Output Capacitance (Coss) | 32 pF |
| Reverse Transfer Capacitance (Crss) | 7.153 nF |
| Power Dissipation (Pd) @ Tc | 217 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 (Automotive) |
| RoHS Status | Compliant |
IAUCN10S7N021ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Source (S) — Source connection, internally tied to pins 3, 7, 8 and exposed pad |
| Pin 3 | Source (S) — Source connection, internally tied to pins 2, 7, 8 and exposed pad |
| Pin 4 | NC — Not connected (per datasheet); recommended to be soldered for mechanical stability |
| Pin 5 | Drain (D) — Drain connection, internally tied to pin 6 and exposed pad |
| Pin 6 | Drain (D) — Drain connection, internally tied to pin 5 and exposed pad |
| Pin 7 | Source (S) — Source connection, internally tied to pins 2, 3, 8 and exposed pad |
| Pin 8 | Source (S) — Source connection, internally tied to pins 2, 3, 7 and exposed pad |
Safe Operating Area (DC, Tj=25 °C)
Typical Applications
IAUCN10S7N021ATMA1 is suitable for 6 applications: 48 V Mild-Hybrid DC-DC Converter, Automotive 12 V/48 V Belt-Starter-Generator, Electric Power Steering (EPS) Motor Drive, High-Current USB-PD/EPR Charging Port, Telecom/Server 48 V-12 V Bus Converter, Industrial High-Power Synchronous Rectifier.
48 V Mild-Hybrid DC-DC Converter
The IAUCN10S7N021ATMA1 is the primary synchronous-rectifier switch in 48 V mild-hybrid DC-DC converters interfacing the 48 V bus with the 12 V battery rail. Its 100 V VDS rating provides ample headroom for 48 V nominal plus transient overshoot during load-dump events, while the 2.1 mΩ max R<sub>DS(on)</sub> at 10 V VGS minimizes body-diode conduction losses at 100-200 A peak currents typical of 48 V to 12 V buck stages. Placed on the synchronous-rectifier side of the buck converter with a gate-drive IC providing 10 V VGS; the part's 105 nC total gate charge allows switching frequencies of 100-200 kHz with manageable driver losses. Unlike 60 V MOSFETs, the 100 V rating eliminates avalanche risk during 48 V bus transients.
Recommended
Automotive 12 V/48 V Belt-Starter-Generator
The IAUCN10S7N021ATMA1 serves as the high-current switching element in belt-starter-generator (BSG) and integrated-starter-generator (ISG) modules that interface combustion engines with 48 V electrical systems. The 175 A continuous drain current and 217 W power dissipation at Tc support the 5-15 kW peak power levels typical of mild-hybrid BSG systems. The exposed pad of the PG-TDSON-8-53 package provides the thermal conductivity required for sustained 100+ A operation underhood. The Infineon datasheet's SOA curves confirm safe operation at the high inrush currents seen during engine cranking. AEC-Q101 qualification and 175 °C Tj max rating make the part robust against underhood thermal cycling.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUCN10S7N021ATMA1 is used in the 3-phase inverter bridge of electric power steering (EPS) systems where reliability and fault tolerance are safety-critical. The 2.1 mΩ R<sub>DS(on)</sub> at 10 V VGS keeps conduction losses low at the 30-80 A RMS phase currents of passenger-vehicle EPS, while the 100 V VDS rating supports 48 V EPS architectures with comfortable transient margin. The OptiMOS 7 cell structure provides tight R<sub>DS(on)</sub> distribution part-to-part, simplifying inverter current-sensing calibration. Per Infineon product page, this part is qualified to AEC-Q101, which is mandatory for steering-system safety functions (ASIL-D capable with redundant inverter channels).
Recommended
High-Current USB-PD/EPR Charging Port
The IAUCN10S7N021ATMA1 functions as the hot-swap and reverse-polarity protection switch in 48 V EPR (Extended Power Range) USB-PD charging ports rated for 140-240 W output. Its 100 V VDS rating easily handles the 48 V EPR bus with transient margin, while the 2.1 mΩ max R<sub>DS(on)</sub> limits steady-state voltage drop to less than 100 mV at 5 A continuous charging current. The 105 nC total gate charge allows the protection switch to turn off within microseconds during fault events. Compared to mechanical relays, the solid-state MOSFET provides silent, arc-free switching and 100x longer operational life in high-cycle-count charging-port applications.
Recommended
Telecom/Server 48 V-12 V Bus Converter
The IAUCN10S7N021ATMA1 is used in high-density 48 V to 12 V intermediate bus converters for hyperscale data centers where efficiency at 100-200 A output is critical. Its 100 V VDS rating exceeds the 60 V max of typical telecom bus rails, providing substantial transient headroom during hot-swap events. The 2.1 mΩ R<sub>DS(on)</sub> and 217 W power dissipation enable continuous operation at 50-80 A in a footprint under 30 mm² on each side of the converter, supporting the industry's drive to higher power density. Infineon's OptiMOS 7 generation offers 30-40% lower switching losses versus prior OptiMOS generations, improving light-load efficiency at the 5-15 A bias currents common in always-on server rails.
Recommended
Industrial High-Power Synchronous Rectifier
The IAUCN10S7N021ATMA1 operates as the synchronous-rectifier element in industrial SMPS, welding inverters, and induction-heating power stages where 48-72 V DC bus voltages are common. Its 100 V VDS rating is ideal for 60 V telecom-rectifier outputs and 72 V industrial battery systems, while the 2.1 mΩ R<sub>DS(on)</sub> at 10 V VGS and 175 A continuous current handle the 5-10 kW power levels typical of these applications. The exposed thermal pad enables direct PCB heatsink attachment without an isolated thermal interface, simplifying mechanical assembly. The 175 °C Tj max rating supports the elevated cooling-fluid temperatures found in sealed industrial enclosures.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN10S7N021ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N04S6L025ATMA1 | ISC080N10NM6ATMA1 | IAUT300N08S5N012ATMA2 | VBGQA1103 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-53 (SSO8 5x6 mm) - same | PG-TDSON-8-53 (SSO8 5x6 mm) - same | PG-TDSON-8-53 (SSO8 5x6 mm) - same | DFN 5x6 mm - equivalent footprint |
| Drain-Source Voltage (VDS) | 100 V | 40 V (-60%) | 100 V (same) | 80 V (-20%) | 100 V (same) |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | 1.2 mΩ (-43%) | 8 mΩ (+280%) | 1.2 mΩ (-43%) | 3.45 mΩ (+64%) |
| Continuous Drain Current (ID) | 175 A | [DATA_NEEDED] | [DATA_NEEDED] | 300 A (+71%) | 135 A (-23%) |
| Total Gate Charge (Qg) | 105 nC @ 10 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS™ 7 | OptiMOS™ 6 | OptiMOS™ 6 | OptiMOS™ 5 | Trench (VBsemi in-house) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 equivalent (per VBsemi datasheet) |
Key Differentiators
- Lowest RDS(on) in 100 V OptiMOS 7 family at SSO8 footprint (vs ISC080N10NM6ATMA1)
- OptiMOS 7 generation with improved switching figure-of-merit (vs IAUT300N08S5N012ATMA2)
- AEC-Q101 automotive qualification at lowest industry pricing (vs VBGQA1103 (VBsemi))
Design Notes
Estimated: At continuous ID=100 A and R<sub>DS(on)</sub>=2.1 mΩ (typical ≈1.7 mΩ at Tj=100 °C), the IAUCN10S7N021ATMA1 dissipates ≈21 W of conduction loss. The PG-TDSON-8-53 package has a junction-to-case thermal resistance of approximately 0.6 °C/W per the Infineon datasheet; junction-to-ambient depends on PCB copper area. To sustain 100 A continuous at 100 °C ambient, the PCB copper pour must be at least 100 mm² (1 oz Cu) on drain and source pads, with thermal vias connecting to inner planes. At 175 A full rated current, even larger copper and active cooling are required.
Place the gate-drive loop (gate resistor, gate driver, and the MOSFET gate-source return) within 5 mm of the gate and source pins to minimize parasitic loop inductance. The high-side switching node (drain) trace should be at least 2 mm wide to carry the peak current without excessive voltage drop, and the exposed pad must be soldered to a continuous copper pour with thermal vias (0.3 mm drill, 1 mm pitch) connecting to internal copper planes. Per Infineon application notes, paralleling two IAUCN10S7N021ATMA1 devices reduces R<sub>DS(on)</sub> to ≈1.05 mΩ but requires careful gate-drive symmetry (matched gate resistors and identical gate-drive traces).
Do not operate the IAUCN10S7N021ATMA1 above 100 V VDS — even transient overshoot during 48 V load-dump can exceed this rating if the bus has inadequate TVS clamping. The gate threshold of 3.2 V (typical) means it can partially turn on with noise; for safety-critical applications use a gate-to-source pull-down resistor of 10 kΩ to ensure defined off-state. Do not exceed the 217 W power dissipation rating — at 175 A continuous this requires 100+ mm² of PCB copper plus thermal vias, and derate aggressively for ambient temperatures above 100 °C.
Compliance Information
AEC-Q101 (automotive discrete) qualified per Arrow and DigiKey listings — not AEC-Q100 (which is for ICs). Lead-free and halogen-free per Infineon product page.
