IAUCN10S7N021ATMA1 vs IAUC28N08S5L230ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N021ATMA1 dari Infineon dan IAUC28N08S5L230ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N021ATMA1 IAUC28N08S5L230ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS-5 Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-33 (5x6 mm SSO8)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS-5
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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