IAUS260N10S5N019TATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IAUS260N10S5N019TATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΞ© OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 β Active
Specification Comparison
| Parameter | IAUS260N10S5N019TATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) | 260 A (Tj) | β |
| On-State Resistance (Rds(on)) | 1.9 mΞ© (typical, 10 V Vgs) | β |
| Power Dissipation (Pd) | 300 W (Tc) | β |
| Package | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 16 | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | -55 C to +175 C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (OptiMOS 5) |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |