IAUS300N08S5N011TATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUS300N08S5N011TATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUS300N08S5N011TATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS-5 (trench MOSFET) OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (V_DS) 80 V —
Continuous Drain Current (I_D, Tj) 300 A —
Power Dissipation (P_D, Tc) 375 W —
R_DS(on) Max @ V_GS=10V 1.1 mOhm —
Gate Threshold Voltage (V_GS(th)) 3 V (max) —
Total Gate Charge (Q_G) @ 10V 231 nC —
Output Capacitance (C_OSS) 130 pF (typ) —
Reverse Transfer Capacitance (C_RSS) 16.25 nF (typ) —
Operating Temperature Range -55 C to +175 C (Tj) -55C to +175C (junction)
Package PG-HDSOP-16-2 (HDSOP-16) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Number of Channels 1 —
RoHS Status Compliant Compliant
Automotive Qualified Yes (Infineon automotive part) —
Drain-Source Voltage (Vds) — 120 V
Continuous Drain Current (Id) at Ta=25C — 19.2 A
Pulsed Drain Current (Idm) at Tc — 163 A
On-Resistance Rds(on) typ at Vgs=10V — 3.7 mOhm
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 214 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ — [DATA_NEEDED: Qg total]
Avalanche Energy Rated — Yes (single-pulse)
MSL Level — 1 (per JEDEC J-STD-020)

Datasheets & Resources

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