IAUS300N08S5N012 vs IAUS300N08S5N012T Comparison

Detailed side-by-side comparison of IAUS300N08S5N012 by Infineon and IAUS300N08S5N012T by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUS300N08S5N012 IAUS300N08S5N012T
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.88 $10.95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 300 A —
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V 1.2 mΩ typical —
Gate-Source Threshold Voltage VGS(th) 3.8 V at 275 µA —
Power Dissipation (PD) at TC 375 W —
Operating Temperature Range -55°C to +175°C [DATA_NEEDED: full min/max operating temperature range]
Package PG-HSOG-8-1 (Surface Mount) PG-HDSOP-16-2 (TOLT, topside-cooled)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance RoHS compliant (Green product) —
Avalanche Rating 100% Avalanche tested —
Technology OptiMOS 5 planar trench OptiMOS 5
Terminals 8 —
Part Number — IAUS300N08S5N012T
Drain-Source Voltage (V_DS) — 80 V
On-State Resistance (R_DS(on)) — 1.2 mΩ max @ V_GS = 10 V
Continuous Drain Current (I_D) — 300 A (Tj)
Power Dissipation (P_D) — 375 W (Tc)
Thermal Resistance Junction-to-Case (R_thJC) — 0.4 K/W
Maximum Chip Current — 400 A at 25°C (chip-limited)
Channel Polarity — N-Channel
Marking Code — 5N08012
RoHS Status — Compliant (per Infineon product page)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: typical threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: typical total gate charge]

Datasheets & Resources

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