IAUS300N08S5N012 vs IAUS300N08S5N012T 对比

详细并排对比 IAUS300N08S5N012 出自 Infineon 和 IAUS300N08S5N012T 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IAUS300N08S5N012 IAUS300N08S5N012T
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.88 $10.95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 300 A —
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V 1.2 mΩ typical —
Gate-Source Threshold Voltage VGS(th) 3.8 V at 275 µA —
Power Dissipation (PD) at TC 375 W —
工作温度范围 -55°C to +175°C [DATA_NEEDED: full min/max operating temperature range]
封装 PG-HSOG-8-1 (Surface Mount) PG-HDSOP-16-2 (TOLT, topside-cooled)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance RoHS compliant (Green product) —
Avalanche Rating 100% Avalanche tested —
Technology OptiMOS 5 planar trench OptiMOS 5
Terminals 8 —
Part Number — IAUS300N08S5N012T
Drain-Source Voltage (V_DS) — 80 V
On-State Resistance (R_DS(on)) — 1.2 mΩ max @ V_GS = 10 V
Continuous Drain Current (I_D) — 300 A (Tj)
Power Dissipation (P_D) — 375 W (Tc)
Thermal Resistance Junction-to-Case (R_thJC) — 0.4 K/W
Maximum Chip Current — 400 A at 25°C (chip-limited)
Channel Polarity — N-Channel
Marking Code — 5N08012
RoHS 状态 — Compliant (per Infineon product page)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: typical threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: typical total gate charge]

数据手册与资源

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