IAUS300N08S5N012 vs IAUS300N08S5N012T 비교

다음의 상세 나란히 비교: IAUS300N08S5N012 제조: Infineon 및 IAUS300N08S5N012T 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUS300N08S5N012 IAUS300N08S5N012T
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.88 $10.95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 300 A —
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V 1.2 mΩ typical —
Gate-Source Threshold Voltage VGS(th) 3.8 V at 275 µA —
Power Dissipation (PD) at TC 375 W —
동작 온도 범위 -55°C to +175°C [DATA_NEEDED: full min/max operating temperature range]
패키지 PG-HSOG-8-1 (Surface Mount) PG-HDSOP-16-2 (TOLT, topside-cooled)
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance RoHS compliant (Green product) —
Avalanche Rating 100% Avalanche tested —
Technology OptiMOS 5 planar trench OptiMOS 5
Terminals 8 —
Part Number — IAUS300N08S5N012T
Drain-Source Voltage (V_DS) — 80 V
On-State Resistance (R_DS(on)) — 1.2 mΩ max @ V_GS = 10 V
Continuous Drain Current (I_D) — 300 A (Tj)
Power Dissipation (P_D) — 375 W (Tc)
Thermal Resistance Junction-to-Case (R_thJC) — 0.4 K/W
Maximum Chip Current — 400 A at 25°C (chip-limited)
Channel Polarity — N-Channel
Marking Code — 5N08012
RoHS 상태 — Compliant (per Infineon product page)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: typical threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: typical total gate charge]

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