IAUS300N08S5N012 vs IAUS300N08S5N012T Vergleich

Detaillierter Direktvergleich von IAUS300N08S5N012 von Infineon und IAUS300N08S5N012T von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUS300N08S5N012 IAUS300N08S5N012T
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,88 $10,95
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 300 A —
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V 1.2 mΩ typical —
Gate-Source Threshold Voltage VGS(th) 3.8 V at 275 µA —
Power Dissipation (PD) at TC 375 W —
Betriebstemperaturbereich -55°C to +175°C [DATA_NEEDED: full min/max operating temperature range]
Gehäuse PG-HSOG-8-1 (Surface Mount) PG-HDSOP-16-2 (TOLT, topside-cooled)
Montageart Surface Mount Surface Mount
MSL-Level MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance RoHS compliant (Green product) —
Avalanche Rating 100% Avalanche tested —
Technology OptiMOS 5 planar trench OptiMOS 5
Terminals 8 —
Part Number — IAUS300N08S5N012T
Drain-Source Voltage (V_DS) — 80 V
On-State Resistance (R_DS(on)) — 1.2 mΩ max @ V_GS = 10 V
Continuous Drain Current (I_D) — 300 A (Tj)
Power Dissipation (P_D) — 375 W (Tc)
Thermal Resistance Junction-to-Case (R_thJC) — 0.4 K/W
Maximum Chip Current — 400 A at 25°C (chip-limited)
Channel Polarity — N-Channel
Marking Code — 5N08012
RoHS-Status — Compliant (per Infineon product page)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: typical threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: typical total gate charge]

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