IAUS300N08S5N012 vs IAUS300N08S5N012T Comparación
Comparación detallada lado a lado de IAUS300N08S5N012 por Infineon y IAUS300N08S5N012T por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ ActivoInfineon
IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
IAUS300N08S5N012T ✓ ActivoComparación de especificaciones
| Parámetro | IAUS300N08S5N012 | IAUS300N08S5N012T |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,88 | $10,95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 300 A | — |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | 1.2 mΩ typical | — |
| Gate-Source Threshold Voltage VGS(th) | 3.8 V at 275 µA | — |
| Power Dissipation (PD) at TC | 375 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | [DATA_NEEDED: full min/max operating temperature range] |
| Encapsulado | PG-HSOG-8-1 (Surface Mount) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | RoHS compliant (Green product) | — |
| Avalanche Rating | 100% Avalanche tested | — |
| Technology | OptiMOS 5 planar trench | OptiMOS 5 |
| Terminals | 8 | — |
| Part Number | — | IAUS300N08S5N012T |
| Drain-Source Voltage (V_DS) | — | 80 V |
| On-State Resistance (R_DS(on)) | — | 1.2 mΩ max @ V_GS = 10 V |
| Continuous Drain Current (I_D) | — | 300 A (Tj) |
| Power Dissipation (P_D) | — | 375 W (Tc) |
| Thermal Resistance Junction-to-Case (R_thJC) | — | 0.4 K/W |
| Maximum Chip Current | — | 400 A at 25°C (chip-limited) |
| Channel Polarity | — | N-Channel |
| Marking Code | — | 5N08012 |
| Estado RoHS | — | Compliant (per Infineon product page) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: typical threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: typical total gate charge] |