IAUS300N08S5N012T vs IAUS300N08S5N012 Comparison

Detailed side-by-side comparison of IAUS300N08S5N012T by Infineon and IAUS300N08S5N012 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUS300N08S5N012T IAUS300N08S5N012
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $10.95 $3.88
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUS300N08S5N012T —
Technology OptiMOS 5 OptiMOS 5 planar trench
Drain-Source Voltage (V_DS) 80 V —
On-State Resistance (R_DS(on)) 1.2 mΩ max @ V_GS = 10 V —
Continuous Drain Current (I_D) 300 A (Tj) —
Power Dissipation (P_D) 375 W (Tc) —
Thermal Resistance Junction-to-Case (R_thJC) 0.4 K/W —
Maximum Chip Current 400 A at 25°C (chip-limited) —
Package PG-HDSOP-16-2 (TOLT, topside-cooled) PG-HSOG-8-1 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Channel Polarity N-Channel —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Marking Code 5N08012 —
Operating Temperature Range [DATA_NEEDED: full min/max operating temperature range] -55°C to +175°C
RoHS Status Compliant (per Infineon product page) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: typical threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: typical total gate charge] —
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
MSL Level — MSL1 (up to 260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Rating — 100% Avalanche tested
Terminals — 8

Datasheets & Resources

Browse All Products Create BOM Request Quote