IAUS300N08S5N012T vs IAUS300N08S5N012 Comparaison
Comparaison détaillée côte à côte de IAUS300N08S5N012T par Infineon et IAUS300N08S5N012 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
IAUS300N08S5N012T ✓ ActifInfineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ ActifComparaison des spécifications
| Paramètre | IAUS300N08S5N012T | IAUS300N08S5N012 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10,95 | $3,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUS300N08S5N012T | — |
| Technology | OptiMOS 5 | OptiMOS 5 planar trench |
| Drain-Source Voltage (V_DS) | 80 V | — |
| On-State Resistance (R_DS(on)) | 1.2 mΩ max @ V_GS = 10 V | — |
| Continuous Drain Current (I_D) | 300 A (Tj) | — |
| Power Dissipation (P_D) | 375 W (Tc) | — |
| Thermal Resistance Junction-to-Case (R_thJC) | 0.4 K/W | — |
| Maximum Chip Current | 400 A at 25°C (chip-limited) | — |
| Boîtier | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-HSOG-8-1 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount |
| Channel Polarity | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Marking Code | 5N08012 | — |
| Plage de température de fonctionnement | [DATA_NEEDED: full min/max operating temperature range] | -55°C to +175°C |
| Statut RoHS | Compliant (per Infineon product page) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: typical threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: typical total gate charge] | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 300 A |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | — | 1.2 mΩ typical |
| Gate-Source Threshold Voltage VGS(th) | — | 3.8 V at 275 µA |
| Power Dissipation (PD) at TC | — | 375 W |
| Niveau MSL | — | MSL1 (up to 260°C peak reflow) |
| RoHS Compliance | — | RoHS compliant (Green product) |
| Avalanche Rating | — | 100% Avalanche tested |
| Terminals | — | 8 |