IAUS300N08S5N012T vs IAUS300N08S5N012 비교

다음의 상세 나란히 비교: IAUS300N08S5N012T 제조: Infineon 및 IAUS300N08S5N012 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUS300N08S5N012T IAUS300N08S5N012
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $10.95 $3.88
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUS300N08S5N012T —
Technology OptiMOS 5 OptiMOS 5 planar trench
Drain-Source Voltage (V_DS) 80 V —
On-State Resistance (R_DS(on)) 1.2 mΩ max @ V_GS = 10 V —
Continuous Drain Current (I_D) 300 A (Tj) —
Power Dissipation (P_D) 375 W (Tc) —
Thermal Resistance Junction-to-Case (R_thJC) 0.4 K/W —
Maximum Chip Current 400 A at 25°C (chip-limited) —
패키지 PG-HDSOP-16-2 (TOLT, topside-cooled) PG-HSOG-8-1 (Surface Mount)
실장 유형 Surface Mount Surface Mount
Channel Polarity N-Channel —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Marking Code 5N08012 —
동작 온도 범위 [DATA_NEEDED: full min/max operating temperature range] -55°C to +175°C
RoHS 상태 Compliant (per Infineon product page) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: typical threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: typical total gate charge] —
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
MSL 레벨 — MSL1 (up to 260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Rating — 100% Avalanche tested
Terminals — 8

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