IAUS300N08S5N012T vs IAUS300N08S5N012 对比

详细并排对比 IAUS300N08S5N012T 出自 Infineon 和 IAUS300N08S5N012 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IAUS300N08S5N012T IAUS300N08S5N012
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $10.95 $3.88
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUS300N08S5N012T —
Technology OptiMOS 5 OptiMOS 5 planar trench
Drain-Source Voltage (V_DS) 80 V —
On-State Resistance (R_DS(on)) 1.2 mΩ max @ V_GS = 10 V —
Continuous Drain Current (I_D) 300 A (Tj) —
Power Dissipation (P_D) 375 W (Tc) —
Thermal Resistance Junction-to-Case (R_thJC) 0.4 K/W —
Maximum Chip Current 400 A at 25°C (chip-limited) —
封装 PG-HDSOP-16-2 (TOLT, topside-cooled) PG-HSOG-8-1 (Surface Mount)
安装类型 Surface Mount Surface Mount
Channel Polarity N-Channel —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Marking Code 5N08012 —
工作温度范围 [DATA_NEEDED: full min/max operating temperature range] -55°C to +175°C
RoHS 状态 Compliant (per Infineon product page) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: typical threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: typical total gate charge] —
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
MSL 等级 — MSL1 (up to 260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Rating — 100% Avalanche tested
Terminals — 8

数据手册与资源

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