IAUT165N08S5N029ATMA2 vs IPB100N04S4H2ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUT165N08S5N029ATMA2 tarafından Infineon ve IPB100N04S4H2ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ AktifInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUT165N08S5N029ATMA2 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUT165N08S5N029ATMA2 | — |
| Product Family | OptiMOS™ 5 | — |
| Transistor Türü | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | — |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | — |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C (T<sub>j</sub>) | — |
| Paket / Kas | PG-HSOF-8-1 (8+Tab, Surface Mount) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (Green Product) |
| Avalanche Tested | 100% Avalanche Tested | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| İşletim Jant Sıcaklığı | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Paket | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| MSL Seviyesi | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |