IAUT300N08S5N014ATMA1 vs IPB60R280P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUT300N08S5N014ATMA1 sa pamamagitan ng Infineon at IPB60R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IAUT300N08S5N014ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $0.88 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation PD @ TC=25°C | 300 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) | — |
| Peak Reflow Temperature | 260 °C | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per Infineon datasheet) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology Family | OptiMOS 5 (Infineon) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | Superjunction (SJ) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Bilang ng Pin | — | 3 (2 + Tab) |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |