IAUT300N08S5N014ATMA1 vs ISC015N06NM5ATMA1 比較

詳細並排比較 IAUT300N08S5N014ATMA1 由 Infineon 與 ISC015N06NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 ✓ 啟用中
Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ 啟用中

規格比較

參數 IAUT300N08S5N014ATMA1 ISC015N06NM5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25°C 300 A (DC) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Gate-Source Voltage (VGS) Max ±20 V (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
On-Resistance RDS(on) typ @ VGS=10V 1.4 mΩ —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max] —
Power Dissipation PD @ TC=25°C 300 W —
工作接面溫度 -55 °C to +175 °C —
封裝 PG-HSOF-8-1 (8-pin + tab, Surface Mount) PG-TDSON-8 (PQFN 5x6) Drain-Down
安裝類型 Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≤30 °C / 85 % RH) 1
Peak Reflow Temperature 260 °C —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per Infineon datasheet) —
RoHS Compliance Compliant (Green Product) —
Technology Family OptiMOS 5 (Infineon) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
工作溫度範圍 — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5)
RoHS 狀態 — Compliant

資料表與資源

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