IAUT300N10S5N015ATMA1 vs IAUC90N10S5N062ATMA1 Comparison

Detailed side-by-side comparison of IAUT300N10S5N015ATMA1 by Infineon and IAUC90N10S5N062ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ Active

Specification Comparison

Parameter IAUT300N10S5N015ATMA1 IAUC90N10S5N062ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 N-Channel Power MOSFET Trench MOSFET (OptiMOS 5, Generation 5)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 300 A —
Power Dissipation (PD, Tc) 375 W —
RDS(on) (typ, VGS=10V) 1.5 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) value] —
Operating Temperature Range -55°C to +175°C —
Package PG-HSOF-8-1 (HSOF-8) PG-TDSON-8-34 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
MSL Level MSL1 (260°C peak reflow) —
RoHS Compliance RoHS compliant (Green product) —
Avalanche Tested 100% avalanche tested —
Polarity N-Channel —
Mode of Operation Enhancement-mode —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Operating Junction Temperature — -55 C to +175 C
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)
Lead-Free — Yes

Datasheets & Resources

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