IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
MPN: IAUT300N10S5N015ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $5.85 | $58.50 |
| 100 | $5.2 | $520.00 |
| 500 | $4.65 | $2,325.00 |
| 1,000 | $4.1 | $4,100.00 |
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View Datasheet →IAUT300N10S5N015ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 300 A |
| Power Dissipation (PD, Tc) | 375 W |
| RDS(on) (typ, VGS=10V) | 1.5 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature Range | -55°C to +175°C |
| Package | PG-HSOF-8-1 (HSOF-8) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| MSL Level | MSL1 (260°C peak reflow) |
| RoHS Compliance | RoHS compliant (Green product) |
| Avalanche Tested | 100% avalanche tested |
| Polarity | N-Channel |
| Mode of Operation | Enhancement-mode |
IAUT300N10S5N015ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (parallel-bonded) |
| Pin 2 | Source — Source connection (parallel-bonded) |
| Pin 3 | Source — Source connection (parallel-bonded) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (parallel-bonded) |
| Pin 6 | Source — Source connection (parallel-bonded) |
| Pin 7 | Source — Source connection (parallel-bonded) |
| Pin 8 | Source / Drain Tab — Source bond pad / drain exposed metal tab (electrically drain-tied, exposed for thermal dissipation) |
Safe Operating Area (DC)
Typical Applications
IAUT300N10S5N015ATMA1 is suitable for 6 applications: 48V Mild-Hybrid Inverter Switching, High-Current DC-DC Converter Primary Switch, BLDC Motor Driver for Electric Power Steering, Battery Disconnect Switch / eFuse Protection, Industrial 48V Robotics Drive, Solar Inverter / Energy Storage DC Switch.
48V Mild-Hybrid Inverter Switching
The IAUT300N10S5N015ATMA1's 100 V VDS rating with 1.5 mΩ RDS(on) makes it ideal as the primary switching element in 48V mild-hybrid inverters. The 300 A continuous current handles the 10–20 kW peak power levels of integrated starter-generators (ISG) and e-turbos, while the AEC-Q101 qualification satisfies automotive reliability targets. The HSOF-8 package's low thermal resistance (~0.4°C/W) keeps junction temperature in check during 100% duty-cycle torque-assist events, and the 100% avalanche rating provides robustness during inductive load dumps.
Recommended
High-Current DC-DC Converter Primary Switch
In 48V-to-12V or 48V-to-5V DC-DC converters delivering 3–5 kW, the IAUT300N10S5N015ATMA1 serves as the primary-side synchronous-rectifier or main switch. Its 1.5 mΩ RDS(on) reduces conduction loss to ~135 W at full 300 A load, dramatically improving efficiency versus discrete MOSFET arrays. The 100 V VDS provides comfortable margin above 48V bus transients (ISO 7637-2 pulses up to ~85V), and the AEC-Q101 grade supports under-hood deployment near engine control units.
Recommended
BLDC Motor Driver for Electric Power Steering
The 300 A continuous current capability of IAUT300N10S5N015ATMA1 supports column-assist EPS systems delivering peak torque during parking maneuvers. Its ultra-low RDS(on) minimizes I²R dissipation in the H-bridge, reducing heatsink mass critical for steering-column-mounted PCBs. The HSOF-8 package handles the repetitive peak-current pulses of servo loops, and AEC-Q101 plus 175°C operation satisfy ISO 26262 ASIL-D functional-safety designs with redundant driver channels.
Recommended
Battery Disconnect Switch / eFuse Protection
As a battery disconnect switch in 48V lithium-ion packs, the IAUT300N10S5N015ATMA1 carries continuous 300 A while its 1.5 mΩ RDS(on) keeps voltage drop below 0.5V at peak load. During short-circuit events, the device's 100% avalanche rating handles the inductive kickback from the battery bus inductance without catastrophic failure. The HSOF-8 footprint simplifies paralleling two devices for 600 A systems, and AEC-Q101 qualification is mandatory for ISO 26262 battery-management deployments.
Recommended
Industrial 48V Robotics Drive
In AGV/AMR robotic drive systems operating on 48V industrial bus rails, the IAUT300N10S5N015ATMA1 provides the high-current switching required for servo and traction inverters. Its 100 V VDS offers 2x safety margin over 48V nominal (typically 56V peak), preventing avalanche failure during regenerative-braking events. The 175°C junction rating supports enclosed motor housings with limited airflow, while the HSOF-8 package's clip-bond construction tolerates high-vibration robot-cell environments.
Recommended
Solar Inverter / Energy Storage DC Switch
In solar microinverters and residential energy-storage systems, the IAUT300N10S5N015ATMA1 functions as the high-side disconnect switch for 48V battery banks. The 1.5 mΩ RDS(on) minimizes idle losses in always-on energy-storage systems, extending battery life. Its 100V VDS handles the maximum power-point voltage of 48V strings with margin, and the HSOF-8 surface-mount package enables automated high-volume PCB assembly versus traditional TO-247 through-hole discretes.
Recommended
Recommended Products Summary
Engineering reference data for IAUT300N10S5N015ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUT300N08S5N011ATMA1 | IAUC90N10S5N062ATMA1 | IAUC100N04S6L020ATMA1 | IAUZ40N08S5N100ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (HSOF-8) | PG-HSOF-8-1 (HSOF-8) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 100 V | 40 V | 80 V | 30 V |
| Continuous Drain Current (ID) | 300 A | 300 A | 90 A | 100 A | 40 A | [DATA_NEEDED] |
| RDS(on) (typ, VGS=10V) | 1.5 mΩ | 1.1 mΩ | 6.2 mΩ | 2.0 mΩ | 10 mΩ | [DATA_NEEDED] |
| Power Dissipation (Tc) | 375 W | 375 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | [DATA_NEEDED] |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | [DATA_NEEDED] |
| Process Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Approximate Price (1k qty, USD) | 4.10 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest continuous current in HSOF-8 class (vs IAUC90N10S5N062ATMA1)
- Lower RDS(on) than IAUC100N04S6L020ATMA1 with same VDS class (vs IAUC100N04S6L020ATMA1)
- Higher VDS rating than 80V-class Infineon alternatives (vs IAUT300N08S5N011ATMA1)
- OptiMOS 5 generation with proven 100% avalanche rating (vs IAUZ40N08S5N100ATMA1)
Design Notes
At 300 A continuous drain current and 1.5 mΩ RDS(on) (25°C), conduction loss is approximately 135 W. Estimated: assuming 4 sq. inches of 2 oz copper on the drain tab with 0.4°C/W junction-to-case and 50°C/W case-to-ambient, junction temperature rises ~110°C above ambient — adequate for 25°C ambient operation but borderline for 85°C under-hood. Add a forced-air fan or increase copper area to 6+ sq. inches for hot environments.
The PG-HSOF-8-1 drain tab is the primary thermal path; use a top-side copper pour of at least 4 sq. inches of 2 oz copper connected to the drain pad. Place an array of thermal vias (12–25 vias, 0.3 mm drill, 0.5 mm pitch) directly under the exposed pad to inner-layer copper spreading. Keep source-return current paths short and symmetric on all 7 source pins to balance current sharing and minimize parasitic source inductance that causes ringing.
Gate-drive traces should be kept short (<25 mm) and routed over a continuous ground plane to minimize gate-loop inductance. Place the gate driver (e.g., 1ED3323MC12NXUMA1) as close as possible to pins 4 (gate) and the source-return pins. Use a bootstrap or isolated gate-drive supply referenced to the source pad, not the drain tab, to avoid dv/dt-induced false triggering. Add a 10–100 Ω gate-resistor in series with the gate to dampen ringing at high di/dt.
Do not exceed VGS = ±20 V — the IAUT300N10S5N015ATMA1 has a relatively low absolute-maximum gate rating compared to 30 V-rated competitors. Always use a gate-source Zener clamp (typically 15–18 V) to protect against dv/dt-induced over-voltage during turn-off transients. Also avoid operating below VGS(th) (typically 2.5–3.5 V) — partial-turn-on causes the device to dissipate excessive power in the linear region.
Switching transients in this 300 A-class device can reach 5–10 kV/μs. Use a snubber (RC or RCD) across the drain-source if switching inductive loads without a freewheeling path. Measure gate-source voltage with a low-inductance probe tip (spring tip, <2 cm ground lead) to avoid spurious ringing that can confuse the driver logic. For paralleled operation, add individual gate-source resistors (10–100 Ω) per device to suppress parasitic oscillations between paralleled MOSFETs.
Compliance Information
RoHS compliant (Green product) and AEC-Q101 qualified for automotive applications. MSL1 reflow rated to 260°C peak. Halogen-free status not explicitly stated in datasheet — set to 'unknown'.
