IAUT300N10S5N015ATMA1 vs IAUC90N10S5N062ATMA1 Perbandingan

Perbandingan bersamaan detil IAUT300N10S5N015ATMA1 dari Infineon dan IAUC90N10S5N062ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUT300N10S5N015ATMA1 IAUC90N10S5N062ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel Power MOSFET Trench MOSFET (OptiMOS 5, Generation 5)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 300 A —
Power Dissipation (PD, Tc) 375 W —
RDS(on) (typ, VGS=10V) 1.5 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) value] —
Rentang Suhu Kerja -55°C to +175°C —
Paket PG-HSOF-8-1 (HSOF-8) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Level MSL MSL1 (260°C peak reflow) —
RoHS Compliance RoHS compliant (Green product) —
Avalanche Tested 100% avalanche tested —
Polarity N-Channel —
Mode of Operation Enhancement-mode —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Suhu Hubung Kerja — -55 C to +175 C
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)
Lead-Free — Yes

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IAUT300N10S5N015ATMA1

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