IAUTN04S7N003ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N003ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N003ATMA1
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N003ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.42 | $0.41 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A | β |
| Power Dissipation (PD) at Tc=25Β°C | 357 W | β |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | β |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 Β°C) | β |
| Body Diode Pulse Current | 3510 A (tp = 100 Β΅s, Tj = 25 Β°C) | β |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | β |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | β |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |