IAUTN04S7N003ATMA1 vs ISC011N04NM7VATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUTN04S7N003ATMA1 tarafından Infineon ve ISC011N04NM7VATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUTN04S7N003ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| Power Dissipation (PD) at Tc=25°C | 357 W | — |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C (Tj) | -55 °C to +175 °C (TJ) |
| Paket | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-TDSON-8 (source-down) |
| Montaj Türü | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Durumu | Compliant | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |