IAUTN12S5N017ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUTN12S5N017ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN12S5N017ATMA1
IAUTN12S5N017ATMA1 - 120V 1.7mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN12S5N017ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.83 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 314 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | β |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55C to +175C (Tj) |
| Package | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | β |
| Technology | OptiMOS 5 trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, by package) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Automotive Qualification | β | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |