IAUTN12S5N017ATMA1 vs IAUC120N06S5L015ATMA1 비교

다음의 상세 나란히 비교: IAUTN12S5N017ATMA1 제조: Infineon 및 IAUC120N06S5L015ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 활성

사양 비교

파라미터 IAUTN12S5N017ATMA1 IAUC120N06S5L015ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.83 $0.92
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 120 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 314 A —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 1.7 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.5 V typical (range per datasheet) —
Gate Charge (Q<sub>g</sub>) per datasheet curve (typ. ~150 nC class) —
Maximum Junction Temperature 175 °C —
동작 온도 범위 -55 °C to +175 °C (junction) -55C to +175C (Tj)
패키지 PG-HSOF-8-1 (HSOF-8, surface mount) PG-TDSON-8-43 (Surface Mount)
실장 유형 Surface Mount Surface Mount (exposed pad)
Mounting Position Kelvin source pin (pin 2) for high-frequency layouts —
Technology OptiMOS 5 trench MOSFET N-Channel MOSFET (OptiMOS 5)
Qualification Automotive grade (per Infineon part page, AEC-Q101 expected for the family) —
RoHS 상태 Compliant (per distributor listings) Compliant
MSL 레벨 1 (per JEDEC J-STD-020, by package) [DATA_NEEDED: MSL level]
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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