IAUTN12S5N017ATMA1 vs IAUC120N06S5L015ATMA1 Vergleich
Detaillierter Direktvergleich von IAUTN12S5N017ATMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ AktivInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUTN12S5N017ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,83 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | — |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | — |
| Maximum Junction Temperature | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (junction) | -55C to +175C (Tj) |
| Gehäuse | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-43 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount (exposed pad) |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | — |
| Technology | OptiMOS 5 trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | — |
| RoHS-Status | Compliant (per distributor listings) | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020, by package) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |