IAUTN12S5N017ATMA1 vs IAUC120N06S5L015ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUTN12S5N017ATMA1 par Infineon et IAUC120N06S5L015ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ ActifInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUTN12S5N017ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,83 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | — |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | — |
| Maximum Junction Temperature | 175 °C | — |
| Plage de température de fonctionnement | -55 °C to +175 °C (junction) | -55C to +175C (Tj) |
| Boîtier | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-43 (Surface Mount) |
| Type de montage | Surface Mount | Surface Mount (exposed pad) |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | — |
| Technology | OptiMOS 5 trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | — |
| Statut RoHS | Compliant (per distributor listings) | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020, by package) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |