IAUZ18N10S5L420ATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IAUZ18N10S5L420ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΞ© N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 βœ“ Active
Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter IAUZ18N10S5L420ATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 100V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25Β°C 18 A β€”
On-Resistance RDS(on) max at VGS=10V 42 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 1.7 V to 2.7 V β€”
Total Gate Charge (Qg) typ. 8.5 nC β€”
Power Dissipation (PD) at TC=25Β°C 30 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified β€”
Technology OptiMOS 5 trench OptiMOS 5 Trench MOSFET
Configuration Single with built-in diode Dual N-Channel MOSFET Array
RoHS Status Compliant Compliant
MSL Level 1 1
Product Family β€” OptiMOS 5
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Automotive Qualified β€” Yes (AEC-Q101, IAU prefix)
Operating Temperature Range β€” -55C to +175C (junction)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

Browse All Products Create BOM Request Quote