IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ40N06S5N050ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for IAUZ40N06S5N050ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUZ40N06S5L050ATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSC0993NDATMA1
✅ Drop-In✓ In Stock
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View Datasheet →ISC011N06LM5ATMA1
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View Datasheet →BSC034N06NSATMA1
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$0.65 / Unit
View Datasheet →IAUC60N06S5L073ATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →VBQF1606
✅ Drop-In📋 Reference alternative (not in catalog)
IAUZ40N06S5N050ATMA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, TC) | 40 A |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V |
| Maximum Power Dissipation (PD) | 71 W |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V |
| Technology | OptiMOS 5 (Trench) |
| Channel Type | N-Channel Enhancement Mode |
| Package | PG-TSDSON-8-33 (3.3 x 3.3 mm) |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packaging | Tape & Reel |
IAUZ40N06S5N050ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1) |
| Pin 2 | Source — Source connection (pin 2) |
| Pin 3 | Source — Source connection (pin 3) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (pin 5) |
| Pin 6 | Source — Source connection (pin 6) |
| Pin 7 | Source — Source connection (pin 7) |
| Pin 8 | Drain (EP) — Drain connection via exposed thermal pad |
Safe Operating Area (estimated from RDS(on) and PD)
Typical Applications
IAUZ40N06S5N050ATMA1 is suitable for 6 applications: 48V Mild-Hybrid DC-DC Converters, Synchronous Rectification in Isolated DC-DC, BLDC Motor Drive H-Bridge, High-Current Load Switching (PDU), Battery Management System (BMS) Protection, USB-PD / High-Current Type-C Power Stages.
48V Mild-Hybrid DC-DC Converters
The IAUZ40N06S5N050ATMA1 is ideal for the 12 V secondary-side synchronous rectification stage of 48 V mild-hybrid DC-DC converters. Its 5 mΩ RDS(on) at VGS=10 V minimizes conduction losses at the high secondary-side currents (20-40 A typical), while the 60 V VDS rating provides adequate margin above the 48 V nominal bus. AEC-Q101 qualification meets automotive reliability requirements including temperature cycling, humidity bias, and HTRB. The compact PG-TSDSON-8-33 (3.3 x 3.3 mm) footprint enables high power density on the secondary-side PCB. Placed as the low-side synchronous FET in a buck topology, it pairs with a primary-side 100 V or 80 V MOSFET for an isolated 48 V-to-12 V converter delivering >500 W with peak efficiency above 96%.
Recommended
Synchronous Rectification in Isolated DC-DC
The IAUZ40N06S5N050ATMA1 serves as a secondary-side synchronous rectifier in isolated 48 V-to-12 V or 24 V-to-5 V DC-DC converter modules, where its 5 mΩ RDS(on) directly improves full-load efficiency versus Schottky-diode rectification. The 60 V VDS rating covers 48 V bus transients, and the OptiMOS 5 low QGD enables high-frequency (>200 kHz) operation for smaller magnetics. AEC-Q101 qualification allows deployment in automotive-grade isolated converters for traction or auxiliary systems. Compared with a 100 V Schottky rectifier, the IAUZ40N06S5N050ATMA1 typically reduces rectifier losses by 40-60%, directly cutting heatsink requirements and enabling a fully SMD power stage.
Recommended
BLDC Motor Drive H-Bridge
In automotive BLDC motor drives (water pumps, oil pumps, fans, HVAC blowers), the IAUZ40N06S5N050ATMA1 forms the low-side or high-side switches of a 3-phase H-bridge powered from a 12 V or 24 V bus. Its 5 mΩ RDS(on) limits conduction loss at motor peak currents (often 20-30 A per phase), reducing heatsink mass versus higher-RDS(on) parts. The OptiMOS 5 technology's low gate charge allows PWM frequencies above 20 kHz (above audible range) for quieter motor operation. AEC-Q101 qualification and the -55C to +175C operating junction temperature range support under-hood automotive environments.
Recommended
High-Current Load Switching (PDU)
The IAUZ40N06S5N050ATMA1 acts as a high-side or low-side load switch in automotive Power Distribution Units (PDUs), driving resistive or inductive loads up to 40 A continuous. Its 5 mΩ RDS(on) keeps voltage drop across the switch below 200 mV at full load (40 A × 5 mΩ), preserving supply margin for downstream electronics. The PG-TSDSON-8-33 footprint integrates easily into compact PDU modules. AEC-Q101 qualification and 175C junction temperature rating support under-hood deployment near engine ECUs.
Recommended
Battery Management System (BMS) Protection
Within a 48 V lithium-ion Battery Management System, the IAUZ40N06S5N050ATMA1 can serve as the high-current pre-charge or discharge MOSFET in series with each cell stack. With 5 mΩ RDS(on) and 60 V VDS rating, it handles pack voltages up to 48 V nominal and peak discharge currents of 40 A per device (paralleling multiple devices enables higher pack currents). AEC-Q101 ensures reliability across the battery's wide temperature range. The exposed-pad PG-TSDSON-8-33 package enables direct PCB cooling, simplifying BMS mechanical design.
Recommended
USB-PD / High-Current Type-C Power Stages
For automotive USB-PD 3.1 ports delivering up to 240 W (48 V at 5 A), the IAUZ40N06S5N050ATMA1 functions as the synchronous buck or boost switch on the secondary side of the isolating transformer. Its 5 mΩ RDS(on) and 60 V rating comfortably handle 48 V USB-PD Extended Power Range (EPR) voltages. AEC-Q101 qualification ensures compliance with OEM automotive infotainment reliability targets, while the compact 3.3 x 3.3 mm footprint enables dense multi-port USB-PD hub designs.
Recommended
Recommended Products Summary
Engineering reference data for IAUZ40N06S5N050ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUZ40N06S5L050ATMA1 | BSC0993NDATMA1 | ISC011N06LM5ATMA1 | IAUC60N06S5L073ATMA1 | VBQF1606 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TSDSON-8-33 | PG-TSDSON-8-33 - same | PG-TSDSON-8 - same | PG-TSDSON-8 - same | PG-TSDSON-8-33 - same | DFN8 (3x3) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID) | 40 A | 40 A | [DATA_NEEDED] | [DATA_NEEDED] | 60 A | 40 A |
| RDS(on) typical at VGS=10V | 5 mΩ | 5 mΩ | [DATA_NEEDED] | [DATA_NEEDED] | 7.3 mΩ | 5 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 | Trench |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | [DATA_NEEDED] | [DATA_NEEDED] | Yes (AEC-Q101) | Yes (automotive grade) |
| Approx Unit Price @ 1k | $0.92 | Similar | [DATA_NEEDED] | [DATA_NEEDED] | Slightly lower | Lower (cost alternative) |
Key Differentiators
- Industry-leading FOM (RDS(on) × QG) in 60 V class (vs ISC011N06LM5ATMA1)
- AEC-Q101 automotive qualification with -55C to +175C TJ range (vs VBQF1606 (cross-brand))
- Drop-in compatible with PG-TSDSON-8-33 family footprint (vs IAUZ40N06S5L050ATMA1 (same brand))
Design Notes
Estimated: at ID=20 A continuous with RDS(on)=5 mΩ at TJ=25C, conduction loss is approximately 2 W; thermal resistance RthJA for a 1 oz copper PCB with minimal copper area is ~50 C/W, so junction temperature rise is ~100C. For continuous 30-40 A operation, use a 4-layer PCB with at least 1 square inch of top-side copper and thermal vias under the exposed pad to keep RthJA below 25 C/W. Always verify junction temperature under worst-case ambient and load conditions.
Use a Kelvin-source connection (separate gate-drive return trace directly to the source pin) to minimize source-inductance-induced gate ringing, which can cause false triggering at high di/dt. Keep the gate-loop area (gate driver output, gate resistor, gate pin, source pin back to driver ground) as small as possible. Place a 10-100 Ω gate resistor close to the gate pin to damp parasitic oscillations, especially when using a non-isolated gate driver.
Solder the exposed thermal pad (EP) of the PG-TSDSON-8-33 to a PCB land pattern with an array of thermal vias (typically 9-16 vias of 0.3 mm diameter) for direct bottom-side cooling. The EP is the drain connection; provide sufficient copper to carry the continuous drain current and to spread heat. Avoid routing sensitive analog signals directly under the MOSFET to prevent switching-noise coupling.
Do not exceed the maximum gate-source voltage (typically ±20 V for OptiMOS 5); exceeding VGS_max can permanently damage the gate oxide. Ensure the gate driver can supply sufficient peak current (>1 A) to charge the input capacitance QG at the target switching frequency; slow gate drive increases switching loss and EMI. Verify the body diode reverse-recovery behavior before using the part in bridge topologies, and consider adding a small RC snubber if dv/dt-related ringing is observed.
Compliance Information
AEC-Q101 (automotive discrete semiconductor standard, equivalent grade to AEC-Q100 for discretes) qualified. RoHS and REACH compliant per Infineon product page.
