ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: ISC011N06LM5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
| 5,000 | $0.74 | $3,700.00 |
Drop-in alternatives for ISC011N06LM5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →ISC011N06LM5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 |
| Technology | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A |
| Continuous Drain Current (ID) at Tc | 288 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 188 W |
| RDS(on) max at VGS=10V | 1.15 mOhm |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Operating Temperature Range | -55C to +175C |
| RoHS Status | Compliant |
ISC011N06LM5ATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | D — Drain (connected to exposed pad) |
| Pin 5 | D — Drain (connected to exposed pad) |
| Pin 6 | D — Drain (connected to exposed pad) |
| Pin 7 | D — Drain (connected to exposed pad) |
| Pin 8 | S — Source |
ISC011N06LM5ATMA1 Safe Operating Area
Typical Applications
ISC011N06LM5ATMA1 is suitable for 6 applications: 48V Synchronous Rectification, Hot-Swap and OR-ing Controller, BLDC Motor Drive (e-Mobility), Battery Management Protection FET, USB PD and High-Current USB Type-C, Telecom 48V Distributed Power.
48V Synchronous Rectification
The ISC011N06LM5ATMA1 is well suited as the low-side synchronous FET in 48 V to point-of-load DC-DC converters used in telecom and 48 V automotive architectures. Its 1.15 mOhm max RDS(on) at 10 V VGS directly reduces conduction loss, while the 60 V VDS rating provides ample headroom above 48 V nominal plus transient overshoot. The OptiMOS 5 process delivers low Qg/Qgd for fast switching at high frequency, enabling higher converter power density. Place the FET on a continuous copper pour beneath the exposed pad to keep junction temperature within safe limits at full load, and drive the gate with a 10 V capable driver for lowest RDS(on).
Recommended
Hot-Swap and OR-ing Controller
The ISC011N06LM5ATMA1 functions as the main pass or OR-ing element in 48 V hot-swap and redundant power architectures. Its 288 A pulsed drain-current capability handles inrush transients when discharged bulk capacitance is connected, while the 1.15 mOhm RDS(on) minimizes steady-state voltage drop and dissipation in OR-ing applications. Designers must observe the SOA curve to ensure the device stays within thermal limits during the inrush event; gate-drive slew-rate control is essential to keep the operating point within the safe area. The SuperSO8 footprint allows dense layout with the hot-swap controller on the same board.
Recommended
BLDC Motor Drive (e-Mobility)
In 48 V BLDC and e-mobility motor-drive half-bridges, the ISC011N06LM5ATMA1 is sized to switch phase currents up to several tens of amps with low conduction loss. The 1.15 mOhm RDS(on) keeps copper and thermal mass manageable on a SuperSO8 footprint, and the OptiMOS 5 technology supports the PWM frequencies typical of field-oriented control. Use a gate driver with sufficient peak current to charge Qg quickly and minimize dead time, which directly reduces switching loss. The 60 V rating covers 48 V bus transients from regen braking.
Recommended
Battery Management Protection FET
The ISC011N06LM5ATMA1 can serve as a high-side or low-side protection FET in 48 V battery packs and industrial battery management systems. The 60 V VDS rating tolerates transient overvoltage events during disconnect, while the very low RDS(on) minimizes continuous loss when the battery is delivering full power. The SuperSO8 footprint supports the high currents of large-format lithium packs. Pair the FET with a dedicated battery protector IC that monitors overcurrent, short-circuit, and overtemperature to drive the gate within safe operating limits.
Recommended
USB PD and High-Current USB Type-C
In 48 V to 20 V intermediate bus converters that power USB Power Delivery sinks, the ISC011N06LM5ATMA1 is used as the synchronous FET in high-current paths. Its low RDS(on) supports 100 W+ PD profiles without excessive drop, and the OptiMOS 5 platform keeps switching frequency high enough for compact magnetics. The SuperSO8 footprint fits within the dense Type-C adapter PCB. Designers must observe the SOA for cable plug-in surges when bulk capacitance charges through the FET.
Recommended
Telecom 48V Distributed Power
In -48 V telecom distributed-power intermediate bus converters and battery-plant disconnect switches, the ISC011N06LM5ATMA1 is rated to switch 48 V rails with substantial current. The 60 V VDS rating covers the worst-case transient condition, and the 1.15 mOhm RDS(on) reduces the steady-state voltage drop that would otherwise accumulate in long distribution paths. The SuperSO8 footprint allows the FET to be placed close to the bus input connector for short, low-inductance power loops.
Recommended
Recommended Products Summary
Engineering reference data for ISC011N06LM5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC009N06LM5ATMA1 | BSC034N06NSATMA1 | BSC027N06LS5ATMA1 | IQE008N03LM5ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 family) | PG-TDSON-8 (SuperSO8 family) |
| VDS Max | 60 V | 60 V | 60 V | 60 V | 30 V | 40 V |
| RDS(on) Max at 10V | 1.15 mOhm | ~0.9 mOhm | 3.4 mOhm | 2.7 mOhm | 0.8 mOhm | 5.8 mOhm |
| Continuous Drain Current (Tc) | 288 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Pin-to-Pin Compatible | Yes (SuperSO8 standard) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in the Infineon 60V OptiMOS 5 SuperSO8 family (vs ISC009N06LM5ATMA1)
- Significantly lower RDS(on) than earlier 60V OptiMOS generations (vs BSC027N06LS5ATMA1)
- Higher VDS rating than the 30V sibling for 48V systems (vs IQE008N03LM5ATMA1)
Design Notes
Estimated: at a continuous drain current of 50 A and 1.15 mOhm max RDS(on), conduction loss is approximately 2.9 W, which the SuperSO8 package with adequate copper can dissipate to keep junction temperature rise under 50 C above ambient. For sustained operation near 100 A, use at least 1 square inch of 2 oz copper on both top and bottom layers connected by thermal vias directly beneath the exposed pad to keep Tj below 125 C.
Keep the high-current source and drain PCB traces short and wide to minimize parasitic inductance, which interacts with the high di/dt during switching to produce voltage overshoot above VDS max. Place the gate-driver loop (gate resistor, gate driver output, gate-source return) as compact as possible to avoid gate-oscillation. Use a ground plane directly under the driver to provide a low-impedance return for the gate-drive current and to avoid false triggering.
Do not assume the absolute maximum VDS rating of 60 V tolerates continuous operation at that level - derate by at least 20 percent (target VDS sustained below 48 V) to stay within reliable operating area. Always check the SOA curve for pulsed events such as hot-swap inrush; the DC SOA boundary may be lower than you expect at the high-VDS corner. Also verify the gate driver can sink enough current to discharge the gate quickly at turn-off, otherwise shoot-through can occur in half-bridge topologies.
The SuperSO8 PG-TDSON-8-17 package requires thermal vias directly under the exposed drain pad to carry heat into inner copper layers. Recommended pattern: an array of 0.3 mm vias on a 0.6 mm pitch, filled or plugged, with the inner layers using 2 oz copper or stitched copper pours to spread heat laterally. Avoid placing signal traces under the pad that would force the pad to be smaller and degrade thermal performance.
Compliance Information
RoHS and lead-free confirmed on Infineon product page; AEC-Q100 automotive qualification not explicitly stated in the retrieved product snippet and should be verified on the Infineon automotive-grade product family page if required for automotive designs.
