IAUZN04S7L025ATMA1 vs IAUCN04S7L042GATMA1 比較

詳細並排比較 IAUZN04S7L025ATMA1 由 Infineon 與 IAUCN04S7L042GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 ✓ 啟用中

規格比較

參數 IAUZN04S7L025ATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7 40V
Technology N-Channel Trench MOSFET Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
工作接面溫度 -55C to +175C —
封裝 PG-TSDSON-8-44 (S3O8) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安裝類型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
MSL 等級 [DATA_NEEDED: MSL rating] 1
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
工作溫度範圍 — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
RoHS 狀態 — Compliant
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

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