IAUZN04S7L025ATMA1 vs IAUCN04S7L042GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L025ATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L025ATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7 40V
Technology N-Channel Trench MOSFET Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TSDSON-8-44 (S3O8) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Tipe Mounting Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] 1
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Rentang Suhu Kerja — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Status RoHS — Compliant
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

Spek dan Sumber

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