IAUZN04S7L025ATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN04S7L025ATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUZN04S7L025ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 —
Technology N-Channel Trench MOSFET Trench MOSFET, N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
Suhu Hubung Kerja -55C to +175C —
Paket PG-TSDSON-8-44 (S3O8) SSO4G 5x6 mm² (PG-THSOG-4-1)
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Series — OptiMOS 7
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Automotive Qualification — AEC-Q101
Status RoHS — Compliant
Rentang Suhu Kerja — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Spek dan Sumber

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