IAUZN04S7L030ATMA1 vs IAUCN04S7N009ATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L030ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUZN04S7L030ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | — |
| Pulsed Drain Current (IDM, Tj) | 100 A | — |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Operating Junction Temperature (Tj) | -55C to +175C | — |
| Technology Family | OptiMOS-7 | — |
| Channel Type | N-Channel | — |
| Package | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | — |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Operating Temperature | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS Status | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |