IAUZN04S7L030ATMA1 vs IAUCN04S7N009ATMA1 Perbandingan
Perbandingan bersamaan detil IAUZN04S7L030ATMA1 dari Infineon dan IAUCN04S7N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUZN04S7L030ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 60 A | — |
| Pulsed Drain Current (IDM, Tj) | 100 A | — |
| On-State Resistance (RDS(on), VGS=10V max) | 3.05 mΩ | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Operating Junction Temperature (Tj) | -55C to +175C | — |
| Technology Family | OptiMOS-7 | — |
| Channel Type | N-Channel | — |
| Paket | PG-TSDSON-8-44 (S3O8) 3x3 mm² | PG-TDSON-8-34 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (Automotive OptiMOS) | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Suhu Kerja | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| Status RoHS | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |