IAUZN04S7N049ATMA1 vs IAUCN04S7N027GATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7N049ATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7N049ATMA1
IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon
IAUZN04S7N049ATMA1 β ActiveInfineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN04S7N049ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) | 14 A | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 70 A | β |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | β |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) | 1.2 to 4.9 mOhm | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: VGS(th)] | β |
| Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) | 45 W | β |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: operating temperature range] |
| Package | PG-TSDSON-8-44 (5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | Automotive |
| Technology | OptiMOS-7 trench-gate | β |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds max) | β | 40 V |
| Continuous Drain Current (Id) | β | 117 A |
| On-Resistance (Rds(on) max) | β | 2.67 mOhm |
| Power Dissipation (Pd) | β | 70 W (Tc) |
| Package / Case | β | PG-THSOG-4-1 (SSO4G 5x6) |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL] |
| Substrate Compatibility | β | IMS substrates and legacy FR-4 |