IAUZN04S7N049ATMA1 - 40V OptiMOS-7 60A Auto MOSFET | Infineon
MPN: IAUZN04S7N049ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.48 | $48.00 |
| 500 | $0.42 | $210.00 |
| 1,000 | $0.38 | $380.00 |
| 5,000 | $0.32 | $1,600.00 |
IAUZN04S7N049ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals. Low-voltage N-channel MOSFETs like the IAUZN04S7N049 belong to the discrete semiconductor family and are typically deployed as synchronous rectifiers, high-side/low-side switches, or motor-drive outputs in the 12V automotive electrical system. Their place in the system hierarchy is: MOSFET -> power transistor -> discrete semiconductor -> semiconductor.
Key features of the IAUZN04S7N049ATMA1 include its low 1.2-4.9 mOhm R<sub>DS(on)</sub> (V<sub>GS</sub>=10V), 45W power dissipation at T<sub>c</sub>, and an optimized gate charge profile for high-frequency switching. The OptiMOS-7 process improves figure of merit (FOM) versus prior OptiMOS generations, reducing both conduction and switching losses in PWM-driven loads.
The IAUZN04S7N049ATMA1's architecture uses a trench-gate structure with a 40V breakdown voltage optimized for 12V automotive bus rails. With Tj rated up to 175C, the device can handle harsh under-hood thermal environments. According to Infineon's automotive MOSFET portfolio, this part is targeted at BLDC motor drives, DC-DC converters, and high-current solenoid drivers where conduction loss dominates total dissipation.
Typical applications include automotive 12V BLDC motor drives (cooling fans, water pumps, oil pumps), 12V to 48V DC-DC converters, eFuse and high-side switch circuits, and body-electronics load drivers. The low R<sub>DS(on)</sub> makes it especially suitable for high-current paths where minimizing conduction loss and PCB copper area is critical.
Designers should observe the safe operating area (SOA) curve carefully when using this part in linear-mode hot-swap or eFuse applications. The 5x6 mm PG-TSDSON-8-44 footprint requires careful thermal-via design under the exposed pad; inadequate thermal vias will push T<sub>j</sub> above safe limits at full 60A continuous current.
This page synthesizes distributor pricing, AEC-Q101 qualified drop-in alternatives, and application-specific design notes not aggregated on any single distributor or manufacturer page.
Drop-in alternatives for IAUZN04S7N049ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUZN04S7N049ATMA1 (same form factor and footprint) — differing in Package, Technology, Mounting Type, Automotive Qualification, Series.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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View Datasheet →IAUCN04S7L050HATMA1
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View Datasheet →IAUZN04S7N049ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>a</sub>) | 14 A |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 70 A |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) | 1.2 to 4.9 mOhm |
| Power Dissipation (P<sub>D</sub>, T<sub>c</sub>) | 45 W |
| Operating Temperature Range | -55C to +175C (junction) |
| Package | PG-TSDSON-8-44 (5x6 mm) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 (Automotive) |
| Technology | OptiMOS-7 trench-gate |
IAUZN04S7N049ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Source — Source terminal |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal |
Safe Operating Area (DC, T<sub>c</sub>=25C)
Typical Applications
IAUZN04S7N049ATMA1 is suitable for 6 applications: Automotive 12V BLDC Motor Drives, 12V to 48V DC-DC Converter, Automotive eFuse / High-Side Switch, Body Electronics Load Drivers, Industrial 24V Solenoid and Valve Drivers, Battery Management System (BMS) Protection.
Automotive 12V BLDC Motor Drives
The IAUZN04S7N049ATMA1 is a strong fit for automotive 12V BLDC motor drives such as cooling fans, water pumps, and oil pumps. Its 60A continuous current capability at T<sub>c</sub> and 1.2-4.9 mOhm R<sub>DS(on)</sub> directly address the conduction-loss budget of a half-bridge driving 30A continuous per phase. According to the Infineon datasheet, the OptiMOS-7 trench-gate process achieves a figure of merit that minimizes switching loss at 25 kHz to 100 kHz PWM frequencies typical of automotive BLDC. The AEC-Q101 qualification permits direct use under the hood, and the 5x6 mm PG-TSDSON-8-44 footprint keeps the inverter PCB compact.
Recommended
12V to 48V DC-DC Converter
The IAUZN04S7N049ATMA1 suits synchronous-rectifier stages in 12V to 48V boost converters for mild-hybrid automotive systems. With 40V V<sub>DS</sub> and 1.2-4.9 mOhm R<sub>DS(on)</sub>, the part handles the high-side switch role at switching frequencies above 100 kHz where OptiMOS-7's lower gate charge matters most. According to the Infineon datasheet family, the gate-charge profile is optimized for low driver losses in compact converters. The exposed thermal pad of PG-TSDSON-8-44 allows direct heatsinking to the inner PCB copper layers, keeping the converter within 80% of its thermal budget at 30A output.
Recommended
Automotive eFuse / High-Side Switch
The IAUZN04S7N049ATMA1's 40V V<sub>DS</sub> rating and 60A continuous current capability make it suitable for automotive eFuse and high-side load-switch applications. According to the Infineon datasheet, the SOA allows sustained operation in the linear region during hot-swap events, protecting downstream ECUs from inrush currents. The OptiMOS-7 process keeps R<sub>DS(on)</sub> low enough that 30A continuous loads see only 90 to 350 mW of conduction loss. The PG-TSDSON-8-44 footprint integrates easily into distributed electronic control units and zone modules.
Recommended
Body Electronics Load Drivers
The IAUZN04S7N049ATMA1 is a fit for body-electronics load drivers such as seat heaters, window lifters, and lighting modules. With 14A continuous at ambient and AEC-Q101 qualification, the device handles typical body loads under 200W. According to the Infineon automotive MOSFET portfolio, the OptiMOS-7 family supports PWM dimming for LED lighting and proportional control for seat heating at frequencies above 200 Hz. The 1.2-4.9 mOhm R<sub>DS(on)</sub> keeps the PCB temperature below 50C rise at 10A continuous, well inside the body-electronics thermal envelope.
Recommended
Industrial 24V Solenoid and Valve Drivers
The IAUZN04S7N049ATMA1 suits industrial 24V solenoid and valve drivers where AEC-Q101-grade robustness is desirable for harsh environments. With 40V V<sub>DS</sub> it absorbs 24V bus transients, and the 60A continuous rating accommodates large solenoid inrush. According to the Infineon datasheet, the SOA curves permit pulsed operation up to 200A for short solenoid activation. The PG-TSDSON-8-44 package allows direct integration on the same PCB as the solenoid driver IC, reducing wiring complexity in industrial valve banks.
Recommended
Battery Management System (BMS) Protection
The IAUZN04S7N049ATMA1 is suitable for 12V lead-acid or 12V lithium BMS protection switches where low R<sub>DS(on)</sub> matters. With 1.2-4.9 mOhm R<sub>DS(on)</sub> and 60A continuous current, the device serves as a low-side disconnect switch that limits voltage drop to under 100 mV at 50A continuous load. According to the Infineon IAUZN04S7N049 datasheet, the OptiMOS-7 process achieves a 175C maximum junction temperature for thermal headroom under fault conditions. The PG-TSDSON-8-44 5x6 mm footprint integrates into compact BMS modules inside the battery housing.
Recommended
Recommended Products Summary
Engineering reference data for IAUZN04S7N049ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-44 (5x6 mm) | PG-TSDSON-8-44 (5x6 mm) - same | PG-TSDSON-8-44 (5x6 mm) - same | PG-TSDSON-8-44 (5x6 mm) - same | PG-TSDSON-8-44 (5x6 mm) - same | PG-TSDSON-8-44 (5x6 mm) - same |
| V<sub>DS</sub> (max) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10V) | 1.2 to 4.9 mOhm | 1.2 mOhm | 4.2 mOhm | 1.9 mOhm | 5.0 mOhm | 2.7 mOhm |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Technology | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 |
Key Differentiators
- Higher continuous current in same 5x6 mm footprint (vs IAUCN04S7N037GATMA1)
- Lower R<sub>DS(on)</sub> for higher-current paths (vs IAUCN04S7L050HATMA1)
- OptiMOS-7 generation with optimized gate charge (vs Older OptiMOS-5 IAUC60N04S6L030HATMA1)
Design Notes
The PG-TSDSON-8-44 package relies on the exposed thermal pad for heat dissipation. At 60A continuous drain current with R<sub>DS(on)</sub> of 1.2-4.9 mOhm, conduction loss alone reaches 4.3W to 17.6W. According to the Infineon package thermal model, designers must use a 4-layer PCB with thermal-via arrays under the pad (typically 9-16 vias at 0.3 mm drill, 0.5 mm pitch) to keep junction-to-ambient thermal resistance below 50 C/W. Inadequate thermal vias will push T<sub>j</sub> above 175C under sustained 60A load, triggering thermal shutdown.
Place the gate drive resistor within 5 mm of the gate pin to minimize parasitic inductance in the gate-source loop. Use a 10 Ohm to 47 Ohm gate resistor for the OptiMOS-7 gate, and add a 10 kOhm gate-source pull-down resistor to keep the MOSFET off during MCU power-up. According to the Infineon IAUZN04S7N049 datasheet, the maximum allowable V<sub>GS</sub> is +/-20V; never exceed this with switching transients on the gate-source loop.
Do not use the IAUZN04S7N049ATMA1 in 48V automotive systems - the 40V V<sub>DS</sub> rating is below the 60V load-dump transient. For 48V mild-hybrid applications, select from Infineon's 80V or 100V OptiMOS-7 family (e.g. IAUZ40N10S5N130ATMA1). Also note that the 14A continuous rating at ambient (T<sub>a</sub>=25C) drops to about 8A at T<sub>a</sub>=100C; rely on the T<sub>c</sub> rating for thermal calculations, not T<sub>a</sub>.
Compliance Information
AEC-Q101 qualified (note: AEC-Q100 in this field refers to the broader automotive IC standard; this part is a discrete MOSFET qualified to AEC-Q101). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per Infineon environmental data.
