IGI65D1414A3MSXUMA1 vs BSC076N04NDATMA1 مقایسه
مقایسه دقیق کنار به کنار IGI65D1414A3MSXUMA1 توسط Infineon و BSC076N04NDATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ فعال
مقایسه مشخصات
| پارامتر | IGI65D1414A3MSXUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ HEMT | — |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (V_DS, max) | 650 V | — |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET | — |
| Continuous Drain Current | 13.7 A (per Newark listing) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Technology | Enhancement-mode GaN HEMT (eMode) | Trench MOSFET (OptiMOS 3) |
| بسته‌بندی | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | — |
| نوع نصب | Surface Mount | Surface Mount |
| محدوده دمای کاری | [DATA_NEEDED: operating temperature range] | — |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | — |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | — |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | — |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | — |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | — |
| سطح MSL | [DATA_NEEDED: MSL level] | — |
| RoHS Compliance | Compliant | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| دمای اتصال کاری | — | -55 C to +175 C |
| بسته‌بندی / کیس | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |