IGI65D1414A3MSXUMA1 vs BSC076N04NDATMA1 比較

詳細並排比較 IGI65D1414A3MSXUMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ 啟用中

規格比較

參數 IGI65D1414A3MSXUMA1 BSC076N04NDATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ HEMT —
Configuration Half-Bridge (2 FETs in QFN-32, high-side + low-side) Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (V_DS, max) 650 V —
On-Resistance (R_DS(on), typ) 140 mΩ per FET —
Continuous Drain Current 13.7 A (per Newark listing) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Technology Enhancement-mode GaN HEMT (eMode) Trench MOSFET (OptiMOS 3)
封裝 PG-TIQFN-32-1 (QFN-32, 6x8 mm) —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Total Gate Charge (Q_G, typ) [DATA_NEEDED: Q_G total] —
Output Charge (Q_OSS) [DATA_NEEDED: Q_OSS value] —
Reverse Recovery Charge (Q_RR) 0 nC (intrinsic to GaN HEMT, no body diode recovery) —
Thermal Resistance (R_thJA) [DATA_NEEDED: R_thJA value] —
Typical Applications AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS Compliance Compliant —
Series — OptiMOS 3
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
工作接面溫度 — -55 C to +175 C
封裝 / 外殼 — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

資料表與資源

瀏覽所有產品 建立 BOM 索取報價