IGLD60R070D1AUMA3 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IGLD60R070D1AUMA3 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IGLD60R070D1AUMA3 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology GaN HEMT (enhancement-mode, normally-off) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 15 A —
Power Dissipation (PD, Tc) 114 W —
On-Resistance (RDS(on)) 70 mΩ (typical, VGS = 10 V) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] 4 V (max, typical)
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Charge (Qoss) [DATA_NEEDED: Qoss] —
Reverse Recovery Charge (Qrr) Near zero (GaN technology) —
Input Capacitance (Ciss) 380 pF @ 400 V (per Utmel) —
Paket PG-LSON-8-1 (LSON-8 with exposed pad) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 3 —
Bebas Halogen Yes —
Status RoHS Compliant —
Operating Temperature (Tj) [DATA_NEEDED: Tj max] —
Series CoolGaN™ OptiMOS 3
Polarity N-Channel —
Packaging Tape & Reel —
Factory Pack Quantity 3000 —
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon