IPA60R180P7SXKSA1 vs IPB60R280P7ATMA1 Comparison
Detailed side-by-side comparison of IPA60R180P7SXKSA1 by Infineon and IPB60R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPA60R180P7SXKSA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) | — |
| Power Dissipation (PD) at Tc | 26 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Package | PG-TO220-3-312 (Through-Hole, 3 leads) | PG-TO263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 °C to +150 °C (T_j max) |
| Channel Type | N-Channel | — |
| Configuration | Single | Single N-Channel |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Product Family | — | CoolMOS P7 (600 V) |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Pin Count | — | 3 (2 + Tab) |
| Generation | — | 7th Gen CoolMOS (successor to P6) |