IPB100N12S305ATMA2 vs IPC100N04S5L1R5ATMA1 比較

詳細並排比較 IPB100N12S305ATMA2 由 Infineon 與 IPC100N04S5L1R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB100N12S305ATMA2 IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5

IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5

IPB100N12S305ATMA2 ✓ 啟用中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 啟用中

規格比較

參數 IPB100N12S305ATMA2 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 120V —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typ]
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
封裝 / 外殼 PG-TO263-3-2 (D2PAK) —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 °C to +175 °C (TJ) -55C to +175C
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant (Green Product)
MSL 等級 [DATA_NEEDED: MSL rating] MSL1 (260C peak reflow)
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
封裝 — PG-TDSON-8-34 (SS08 leadless)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

資料表與資源

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